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NanoXam
Chemical Mechanical planarization - CMP - dishing and erosionMeasure dishing and erosion in copper interconnect layersNanoXam is a non-contact 3D surface mapping system that can measure the effects of Chemical Mechanical Planarization (CMP) on copper interconnect layers of semiconductor devices. Get off the streets, measure productWith a proven correlation to stylus profilers to assure reliability of results, yet without a stylus to replace or calibrate, NanoXam provides dishing and erosion metrology with high precision in less than a minute. The high through-put, inline measurement enables development and monitoring of Cu CMP process with reduced downtime for offline review. It is a robust BEOL analysis tool, a copper-process metrology tool for fast, precise, noncontact and stable areal height differencing. See more with 3D areal mapsUsing precise pattern recognition for locating and identifying recipe structures of interest, NanoXam provides precise measurements of surface structure. Characterize the effects of planarization using full 3D maps with high spatial resolution. View data using pseudo-color, 3-D & cross section analysis or height maps. Compare 3-D & cross section analysis. Measure targets and actual device structures — non-contact metrology has no stylus to drag on your product — permitting a measurement directly from product areas, and copper interconnects and vias. More sampling, in less timeHigh speed inline measurement acquisition throughput allows a high sampling rate, and reduces slow offline review requirements on SEM. Accurately detect and monitor nonuniformity within-wafer and wafer-to-wafer. All together, enjoy lower cost of ownership with higher sampling rates, direct product measurements, and process monitoring and development benefits. |
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